PSMN1R6-30BL,118
manufacturer:
NXP USA Inc.
Description:
NOW NEXPERIA PSMN1R6-30BL - 100A
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
212 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
12493 PF @ 15 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Supplier Device Package:
D2PAK
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 25A, 10V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
306W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 100A (Tc) 306W (Tc) Surface Mount D2PAK
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