IPW60R099C7
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (Max) @ Id:
4V @ 490µA
Series:
CoolMOS™ C7
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
42 NC @ 10 V
Supplier Device Package:
PG-TO247
Rds On (Max) @ Id, Vgs:
99mOhm @ 9.7A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1819 PF @ 400 V
Drain To Source Voltage (Vdss):
600 V
Power Dissipation (Max):
110W (Tc)
Package / Case:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 600 V 22A (Tc) 110W (Tc) Through Hole PG-TO247
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