IPP50R190CE
manufacturer:
Infineon Technologies
Description:
POWER FIELD-EFFECT TRANSISTOR, 5
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
47.2 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1137 PF @ 100 V
Series:
CoolMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 510µA
Supplier Device Package:
PG-TO220-3-1
Rds On (Max) @ Id, Vgs:
190mOhm @ 6.2A, 13V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
13V
Power Dissipation (Max):
152W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
28.8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 500 V 28.8A (Tc) 152W (Tc) Through Hole PG-TO220-3-1
Send RFQ
Stock:
MOQ: