CPH3360-TL-W
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
2.2 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
82 PF @ 10 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Supplier Device Package:
3-CPH
Rds On (Max) @ Id, Vgs:
303mOhm @ 800mA, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Power Dissipation (Max):
900mW (Ta)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
1.6A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 30 V 1.6A (Ta) 900mW (Ta) Surface Mount 3-CPH
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