PMV75UP,215
manufacturer:
NXP USA Inc.
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
7.5 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
550 PF @ 10 V
Series:
-
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Supplier Device Package:
SOT-23
Rds On (Max) @ Id, Vgs:
102mOhm @ 2.5A, 4.5V
Mfr:
NXP USA Inc.
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
490mW (Ta), 5W (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 20 V 2.5A (Ta) 490mW (Ta), 5W (Tc) Surface Mount SOT-23
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