SP001434884
manufacturer:
Infineon Technologies
Description:
IPN60R1K0CEATMA1 - MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
280 PF @ 100 V
Series:
CoolMOS™ CE
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 130µA
Supplier Device Package:
PG-SOT223
Rds On (Max) @ Id, Vgs:
1Ohm @ 1.5A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
5W (Tc)
Package / Case:
TO-261-3
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6.8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 600 V 6.8A (Tc) 5W (Tc) Surface Mount PG-SOT223
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