AUIRFR1010Z
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Vgs(th) (Max) @ Id:
4V @ 100µA
Series:
HEXFET®
Gate Charge (Qg) (Max) @ Vgs:
95 NC @ 10 V
Supplier Device Package:
D-PAK (TO-252AA)
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 42A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2840 PF @ 25 V
Drain To Source Voltage (Vdss):
55 V
Power Dissipation (Max):
140W (Tc)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 55 V 42A (Tc) 140W (Tc) Surface Mount D-PAK (TO-252AA)
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