IPB65R150CFDATMA1
manufacturer:
Infineon Technologies
Description:
HIGH POWER_LEGACY
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
86 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2340 PF @ 100 V
Series:
CoolMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 900µA
Supplier Device Package:
PG-TO263-3
Rds On (Max) @ Id, Vgs:
150mOhm @ 9.3A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
195.3W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
22.4A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Surface Mount PG-TO263-3
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