IPD60R1K4C6ATMA1
manufacturer:
Infineon Technologies
Description:
IPD60R1K4 - LOW POWER_LEGACY
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 90µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
9.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 1.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
200 PF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ C6
Supplier Device Package:
PG-TO252-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tc)
Power Dissipation (Max):
28.4W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD60R
Introduction
N-Channel 600 V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3
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