IRF6616TRPBF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
44 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
3765 PF @ 20 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.25V @ 250µA
Supplier Device Package:
DIRECTFET™ MX
Rds On (Max) @ Id, Vgs:
5mOhm @ 19A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.8W (Ta), 89W (Tc)
Package / Case:
DirectFET™ Isometric MX
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 106A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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