IRFB61N15DPBF
manufacturer:
Infineon Technologies
Description:
IRFB61N15 - 12V-300V N-CHANNEL P
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (Max) @ Id:
5.5V @ 250µA
Series:
HEXFET®
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
140 NC @ 10 V
Supplier Device Package:
TO-220AB
Rds On (Max) @ Id, Vgs:
32mOhm @ 36A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
3470 PF @ 25 V
Drain To Source Voltage (Vdss):
150 V
Power Dissipation (Max):
2.4W (Ta), 330W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 150 V 60A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB
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