NDD60N745U1-1G
manufacturer:
onsemi
Description:
NDD60N745 - POWER MOSFET 600V 6.
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
15 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
440 PF @ 50 V
Series:
-
Vgs (Max):
±25V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
I-PAK
Rds On (Max) @ Id, Vgs:
745mOhm @ 3.25A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
84W (Tc)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 600 V 6.6A (Tc) 84W (Tc) Through Hole I-PAK
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