NDPL100N10BG
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2950 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
TO-220-3
Rds On (Max) @ Id, Vgs:
7.2mOhm @ 50A, 15V
Mfr:
Onsemi
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V, 15V
Power Dissipation (Max):
2.1W (Ta), 110W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 100A (Ta) 2.1W (Ta), 110W (Tc) Through Hole TO-220-3
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