NDB6020P
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
1590 PF @ 10 V
Series:
-
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
D²PAK (TO-263)
Rds On (Max) @ Id, Vgs:
50mOhm @ 12A, 4.5V
Mfr:
Onsemi
Operating Temperature:
-65°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V
Power Dissipation (Max):
60W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
P-Channel 20 V 24A (Tc) 60W (Tc) Surface Mount D²PAK (TO-263)
Send RFQ
Stock:
MOQ: