FDD1600N10ALZD
manufacturer:
onsemi
Description:
POWER FIELD-EFFECT TRANSISTOR, 6
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
3.61 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
225 PF @ 50 V
Series:
PowerTrench®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Supplier Device Package:
TO-252 (DPAK)
Rds On (Max) @ Id, Vgs:
160mOhm @ 3.4A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Power Dissipation (Max):
14.9W (Tc)
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
6.8A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252 (DPAK)
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