PMN120ENEX
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
7.4 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
275 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.7V @ 250µA
Supplier Device Package:
6-TSOP
Rds On (Max) @ Id, Vgs:
123mOhm @ 2.4A, 10V
Mfr:
Nexperia USA Inc.
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.4W (Ta), 6.25W (Tc)
Package / Case:
SC-74, SOT-457
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 3.1A (Ta) 1.4W (Ta), 6.25W (Tc) Surface Mount 6-TSOP
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