IRF6614TRPBF
manufacturer:
Infineon Technologies
Description:
IRF6614 - 12V-300V N-CHANNEL POW
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2560 PF @ 20 V
Series:
HEXFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.25V @ 250µA
Supplier Device Package:
DIRECTFET™ ST
Rds On (Max) @ Id, Vgs:
8.3mOhm @ 12.7A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.1W (Ta), 42W (Tc)
Package / Case:
DirectFET™ Isometric ST
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
12.7A (Ta), 55A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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