IPI120N10S403AKSA1
manufacturer:
Infineon Technologies
Description:
IPI120N10S4-03 - 75V-100V N-CHAN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
140 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
10120 PF @ 25 V
Series:
Automotive, AEC-Q101, OptiMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.5V @ 180µA
Supplier Device Package:
PG-TO262-3-1
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 100A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
250W (Tc)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
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