IRF6898MTRPBF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Vgs(th) (Max) @ Id:
2.1V @ 100µA
Series:
HEXFET®
Vgs (Max):
±16V
Gate Charge (Qg) (Max) @ Vgs:
68 NC @ 4.5 V
Supplier Device Package:
DirectFET™ Isometric MX
Rds On (Max) @ Id, Vgs:
1.1mOhm @ 40A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
5630 PF @ 13 V
Drain To Source Voltage (Vdss):
25 V
Power Dissipation (Max):
2.8W (Ta), 78W (Tc)
Package / Case:
DirectFET™ Isometric MX
Current - Continuous Drain (Id) @ 25°C:
40A (Ta), 214A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
Schottky Diode (Body)
Introduction
N-Channel 25 V 40A (Ta), 214A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DirectFET™ Isometric MX
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