AUIRLS8409-7P
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
266 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
16488 PF @ 25 V
Series:
Automotive, AEC-Q101, HEXFET®
Vgs (Max):
±16V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Supplier Device Package:
PG-TO263-7
Rds On (Max) @ Id, Vgs:
0.75mOhm @ 100A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
375W (Tc)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 240A (Tc) 375W (Tc) Surface Mount PG-TO263-7
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