FDP8860
manufacturer:
onsemi
Description:
POWER FIELD-EFFECT TRANSISTOR, 8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
222 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
12240 PF @ 15 V
Series:
PowerTrench®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-220-3
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 80A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
254W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 80A (Tc) 254W (Tc) Through Hole TO-220-3
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