PMPB100ENEX
manufacturer:
Nexperia USA Inc.
Description:
PMPB100ENE - 30 V, N-CHANNEL MOS
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
72mOhm @ 3.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
157 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN2020MD-6
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
5.1A (Ta)
Power Dissipation (Max):
3.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMPB100
Introduction
N-Channel 30 V 5.1A (Ta) 3.3W (Ta) Surface Mount DFN2020MD-6
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