IPN80R2K0P7ATMA1
manufacturer:
Infineon Technologies
Description:
LOW POWER_NEW
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
9 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 940mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
175 PF @ 500 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ P7
Supplier Device Package:
PG-SOT223
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Power Dissipation (Max):
6.4W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPN80R2
Introduction
N-Channel 800 V 3A (Tc) 6.4W (Tc) Surface Mount PG-SOT223
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