TPS1101DR
manufacturer:
Texas Instruments
Description:
MOSFET P-CH 15V 2.3A 8SOIC
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
11.25 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vgs (Max):
+2V, -15V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Supplier Device Package:
8-SOIC
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.5A, 10V
Mfr:
Texas Instruments
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 10V
Power Dissipation (Max):
791mW (Ta)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Drain To Source Voltage (Vdss):
15 V
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPS1101
Introduction
P-Channel 15 V 2.3A (Ta) 791mW (Ta) Surface Mount 8-SOIC
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