FCPF1300N80ZYD
manufacturer:
onsemi
Description:
POWER FIELD-EFFECT TRANSISTOR, N
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
21 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
880 PF @ 100 V
Series:
SuperFET® II
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4.5V @ 400µA
Supplier Device Package:
TO-220F-3 (Y-Forming)
Rds On (Max) @ Id, Vgs:
1.3Ohm @ 2A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
24W (Tc)
Package / Case:
TO-220-3 Full Pack, Formed Leads
Drain To Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 800 V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)
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