RJK0601DPN-E0#T2
manufacturer:
Renesas
Description:
RJK0601DPN - N-CHANNEL MOSFET 60
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
141 NC @ 10 V
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
10000 PF @ 10 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
TO-220ABS
Rds On (Max) @ Id, Vgs:
3.1mOhm @ 55A, 10V
Mfr:
Renesas
Operating Temperature:
150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
200W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
110A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 60 V 110A (Ta) 200W (Tc) Through Hole TO-220ABS
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