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P1H06300D8

manufacturer:
PN Junction Semiconductor
Description:
GANFET N-CH 650V 10A DFN 8X8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vgs (Max):
+10V, -20V
Supplier Device Package:
DFN8*8
Rds On (Max) @ Id, Vgs:
-
Mfr:
PN Junction Semiconductor
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V
Power Dissipation (Max):
55.5W
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
10A
Technology:
GaNFET (Gallium Nitride)
Introduction
N-Channel 650 V 10A 55.5W Surface Mount DFN8*8
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