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P3M06060T3

manufacturer:
PN Junction Semiconductor
Description:
SICFET N-CH 650V 46A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.2V @ 20mA (Typ)
Series:
P3M
Vgs (Max):
+20V, -8V
Package:
Tube
Supplier Device Package:
TO-220-2L
Rds On (Max) @ Id, Vgs:
79mOhm @ 20A, 15V
Mfr:
PN Junction Semiconductor
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Power Dissipation (Max):
170W
Package / Case:
TO-220-2
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
46A
Technology:
SiCFET (Silicon Carbide)
Introduction
N-Channel 650 V 46A 170W Through Hole TO-220-2L
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