C3M0065100J-TR
manufacturer:
Wolfspeed, Inc.
Description:
SICFET N-CH 1000V 35A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 15 V
Rds On (Max) @ Id, Vgs:
78mOhm @ 20A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
1000 V
Vgs (Max):
+15V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
660 PF @ 600 V
Mounting Type:
Surface Mount
Series:
C3M™
Supplier Device Package:
TO-263-7
Mfr:
Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Power Dissipation (Max):
113.5W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
C3M0065100
Introduction
N-Channel 1000 V 35A (Tc) 113.5W (Tc) Surface Mount TO-263-7
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