GA20JT12-263
manufacturer:
GeneSiC Semiconductor
Description:
TRANS SJT 1200V 45A D2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Obsolete
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
-
Input Capacitance (Ciss) (Max) @ Vds:
3091 PF @ 800 V
Series:
-
Vgs (Max):
-
Package:
Tube
Supplier Device Package:
TO-263-7
Rds On (Max) @ Id, Vgs:
60mOhm @ 20A
Mfr:
GeneSiC Semiconductor
Operating Temperature:
175°C (TJ)
FET Type:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Power Dissipation (Max):
282W (Tc)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Base Product Number:
GA20JT12
Introduction
1200 V 45A (Tc) 282W (Tc) Surface Mount TO-263-7
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