HTNFET-T
manufacturer:
Honeywell Aerospace
Description:
MOSFET N-CH 55V 4POWER TAB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.4V @ 100µA
Operating Temperature:
-55°C ~ 225°C (TJ)
Package / Case:
4-SIP
Gate Charge (Qg) (Max) @ Vgs:
4.3 NC @ 5 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 100mA, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Bulk
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
290 PF @ 28 V
Mounting Type:
Through Hole
Series:
HTMOS™
Supplier Device Package:
4-Power Tab
Mfr:
Honeywell Aerospace
Current - Continuous Drain (Id) @ 25°C:
-
Power Dissipation (Max):
50W (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HTNFET
Introduction
N-Channel 55 V 50W (Tj) Through Hole 4-Power Tab
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