STP190N55LF3
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 55V 120A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 5 V
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
±18V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6200 PF @ 25 V
Mounting Type:
Through Hole
Series:
STripFET™
Supplier Device Package:
TO-220
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
312W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP190
Introduction
N-Channel 55 V 120A (Tc) 312W (Tc) Through Hole TO-220
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