STU7N105K5
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
17 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
1050 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
380 PF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH5™
Supplier Device Package:
IPAK (TO-251)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Power Dissipation (Max):
110W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU7N105
Introduction
N-Channel 1050 V 4A (Tc) 110W (Tc) Through Hole IPAK (TO-251)
Send RFQ
Stock:
MOQ: