SCT2280KEC
manufacturer:
Rohm Semiconductor
Description:
SICFET N-CH 1200V 14A TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1.4mA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
36 NC @ 18 V
Rds On (Max) @ Id, Vgs:
364mOhm @ 4A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -6V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
667 PF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Power Dissipation (Max):
108W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT2280
Introduction
N-Channel 1200 V 14A (Tc) 108W (Tc) Through Hole TO-247
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