NP70N04MUG-S18-AY
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
Product Status:
Obsolete
Mounting Type:
Through Hole
Package:
Bulk
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
90 NC @ 10 V
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
5mOhm @ 35A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
4900 PF @ 25 V
Drain To Source Voltage (Vdss):
40 V
Power Dissipation (Max):
1.8W (Ta), 115W (Tc)
Package / Case:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 40 V 70A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-220
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