BSC886N03LS G
manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Bulk
Input Capacitance (Ciss) (Max) @ Vds:
2100 PF @ 15 V
Series:
OptiMOS™3
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Supplier Device Package:
PG-TDSON-8
Rds On (Max) @ Id, Vgs:
6mOhm @ 30A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.5W (Ta), 39W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 65A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 30 V 13A (Ta), 65A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount PG-TDSON-8
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