STP7N52K3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
34 NC @ 10 V
Rds On (Max) @ Id, Vgs:
980mOhm @ 3.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
525 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
737 PF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH3™
Supplier Device Package:
TO-220
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
90W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP7N
Introduction
N-Channel 525 V 6A (Tc) 90W (Tc) Through Hole TO-220
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