DMN3030LFG-7
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 30V 5.3A PWRDI3333-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
17.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
18mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
751 PF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerDI3333-8
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
5.3A (Ta)
Power Dissipation (Max):
900mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN3030
Introduction
N-Channel 30 V 5.3A (Ta) 900mW (Ta) Surface Mount PowerDI3333-8
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