PHD9NQ20T,118
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 200V 8.7A DPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
24 NC @ 10 V
Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
959 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
DPAK
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Power Dissipation (Max):
88W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHD9NQ20
Introduction
N-Channel 200 V 8.7A (Tc) 88W (Tc) Surface Mount DPAK
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