BUK652R6-40C,127
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 40V 120A TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
199 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±16V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
11334 PF @ 25 V
Mounting Type:
Through Hole
Series:
TrenchMOS™
Supplier Device Package:
TO-220AB
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
263W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK65
Introduction
N-Channel 40 V 120A (Tc) 263W (Tc) Through Hole TO-220AB
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