TPCC8002-H(TE12L,Q
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 30V 22A 8TSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-VDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
27 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.3mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
2500 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSV-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
22A (Ta)
Power Dissipation (Max):
700mW (Ta), 30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPCC8002
Introduction
N-Channel 30 V 22A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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