BUK9E3R2-40B,127
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 40V 100A I2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
94 NC @ 5 V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±15V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
10502 PF @ 25 V
Mounting Type:
Through Hole
Series:
TrenchMOS™
Supplier Device Package:
I2PAK
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUK9
Introduction
N-Channel 40 V 100A (Tc) 300W (Tc) Through Hole I2PAK
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