PSMN3R7-30YLC,115
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 30V 100A LFPAK56
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.95V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3.95mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1848 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
79W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN3
Introduction
N-Channel 30 V 100A (Tc) 79W (Tc) Surface Mount LFPAK56, Power-SO8
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