PHT6N06T,135
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 55V 5.5A SOT223
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
5.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
150mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
175 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SC-73
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Power Dissipation (Max):
8.3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHT6
Introduction
N-Channel 55 V 5.5A (Tc) 8.3W (Tc) Surface Mount SC-73
Send RFQ
Stock:
MOQ: