PSMN9R0-30LL,115
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 30V 21A 8DFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-VDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
20.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
9mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1193 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN3333 (3.3x3.3)
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Power Dissipation (Max):
50W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN9
Introduction
N-Channel 30 V 21A (Tc) 50W (Tc) Surface Mount 8-DFN3333 (3.3x3.3)
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