PMV117EN,215
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
4.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
117mOhm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
147 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SOT-23 (TO-236AB)
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Power Dissipation (Max):
830mW (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV1
Introduction
N-Channel 30 V 2.5A (Tc) 830mW (Tc) Surface Mount SOT-23 (TO-236AB)
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