PSMN1R1-30EL,127
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 30V 120A I2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
243 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
14850 PF @ 15 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I2PAK
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
338W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R1
Introduction
N-Channel 30 V 120A (Tc) 338W (Tc) Through Hole I2PAK
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