PSMN9R0-30YL,115
manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 30V 61A LFPAK56
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
17.8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1006 PF @ 12 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
61A (Tc)
Power Dissipation (Max):
46W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN9
Introduction
N-Channel 30 V 61A (Tc) 46W (Tc) Surface Mount LFPAK56, Power-SO8
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