PMV45EN,215
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
9.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
42mOhm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
350 PF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
SOT-23 (TO-236AB)
Mfr:
NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C:
5.4A (Tc)
Power Dissipation (Max):
280mW (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMV4
Introduction
N-Channel 30 V 5.4A (Tc) 280mW (Tj) Surface Mount SOT-23 (TO-236AB)
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