BSH111,235
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 55V 335MA TO236AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
1 NC @ 8 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds:
40 PF @ 10 V
Series:
TrenchMOS™
Vgs (Max):
±10V
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Supplier Device Package:
TO-236AB
Rds On (Max) @ Id, Vgs:
4Ohm @ 500mA, 4.5V
Mfr:
Nexperia USA Inc.
Operating Temperature:
-65°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
830mW (Tc)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Drain To Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
335mA (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Introduction
N-Channel 55 V 335mA (Ta) 830mW (Tc) Surface Mount TO-236AB
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